TITLE

Low temperature Si[sub 3]N[sub 4] direct bonding

AUTHOR(S)
Bower, Robert W.; Ismail, Mohd S.; Roberds, Brian E.
PUB. DATE
June 1993
SOURCE
Applied Physics Letters;6/28/1993, Vol. 62 Issue 26, p3485
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates low temperature Si[sub 3]N[sub 4] direct wafer bonding. Advantages of low temperature bonding technique; Importance of wafer flatness and surface roughness in thin film bonding; Occurrence of fracture in the direct bonds; Comparison between Si[sub 3]n[sub 4] and silicon direct bonds.
ACCESSION #
4329809

 

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