Observation of the DX center in Pb-doped GaAs

Willke, U.; Maude, D.K.; Sallese, J.M.; Fille, M.L.; el Jani, B.; Gibart, P.; Portal, J.C.
June 1993
Applied Physics Letters;6/28/1993, Vol. 62 Issue 26, p3467
Academic Journal
Examines the DX center in lead (Pb)-doped gallium arsenide semiconductors. Comparison between the atomic parameters of the Pb and the tin atoms; Effect of DX centers on the performance of devices based on the GaAS/AlGaAs heterojunctions; Tools used in determining the energetic position of the DX center.


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