TITLE

Growth of InGaAs/GaAs quantum wells with perfectly abrupt interfaces by molecular beam epitaxy

AUTHOR(S)
Gerard, Jean-Michel; Le Roux, Guy
PUB. DATE
June 1993
SOURCE
Applied Physics Letters;6/28/1993, Vol. 62 Issue 26, p3452
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines growth of InGaAs/GaAs quantum wells with perfectly abrupt interfaces by molecular beam epitaxy. Measurement of the equilibrium composition X[sub e] of the surface monolayer(ML); Technique for probing the composition X[sub s] of the surface ML; Adjustment of the amount of InAs to be deposited as a prelayer.
ACCESSION #
4329798

 

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