TITLE

Two-photon pumped upconverted lasing in dye doped polymer waveguides

AUTHOR(S)
Mukherjee, Anadi
PUB. DATE
June 1993
SOURCE
Applied Physics Letters;6/28/1993, Vol. 62 Issue 26, p3423
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Measures a two-photon pumped upconverted lasing in dye doped polymer waveguides. Description of a fabricated slab waveguide; Use of a sensitive power meter to calibrate photomultiplier tube response; Correlation between spectral narrowing and the behavior of the upconversion signal.
ACCESSION #
4329788

 

Related Articles

  • Short Optical Pulse Polarization Dynamics in a Nonlinear Birefringent Doped Fiber. Elyutin, S. O.; Maimistov, A. I. // Journal of Experimental & Theoretical Physics;Oct2001, Vol. 93 Issue 4, p737 

    Numerical solutions are obtained of the full self-consistent system of equations for the counter, rotating polarization components of the field of a short optical pulse propagating in a nonlinear birefringent fiber and in the ensemble of the energy-level degenerate doped resonance atoms...

  • Ca-doping in filamentary YBa[sub 2]Cu[sub 3]O[sub y] superconductors. Ohmiya, H.; Goto, T.; Watanabe, K. // AIP Conference Proceedings;2002, Vol. 614 Issue 1, p564 

    Ca-doping in filamentary YBa[sub 2]Cu[sub 3]O[sub y] superconductors was examined to improve the grain boundary properties. The filamentary precursors of Y[sub 0.925]Ca[sub 0.075]Ba[sub 2]Cu[sub 3]O[sub y] were prepared by dry spinning through a homogeneous aqueous solution containing mixed...

  • Low power (bistable) opto-electrical threshold switches with high gain based on n-i-p-i doping.... Hofler, A.; Gulden, K.H.; Kiesel, P.; Kneissl, M.; Knupfer, B.; Riel, P.; Dohler, G.H.; Trankle, G.; Weimann, G. // Applied Physics Letters;6/28/1993, Vol. 62 Issue 26, p3399 

    Investigates low power opto-electrical threshold switches with high gain based on n-i-p-i doping superlattices. Presentation of a configuration consisting of a two terminal photodiode and a three-terminal photoconductive detector structure; Suitability of switches for monolithical integration...

  • Novel amorphous silicon doping superlattice device with bidirectional S-shaped negative.... Liu, C.R.; Fang, Y.K. // Applied Physics Letters;7/12/1993, Vol. 63 Issue 2, p177 

    Investigates the fabrication of amorphous silicon doping superlattice device with bidirectional S-shaped negative differential characteristics. Reason for the occurrence of S-shaped switching phenomenon; Application of electronic transportation theory; Illustration of band diagram at thermal...

  • Strong luminescence from Tamm states in modulation-doped superlattices. Henriques, A. B. // Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p691 

    Calculations are presented for the photoluminescence spectrum of InP/In[sub 0.53]Ga[sub 0.47]As superlattices doped with Si. When doping is confined to the inner barriers, the photoluminescence is dominated by transitions between Tamm states in the electron and valence bands, which contribute...

  • Resistivity of boron-doped polycrystalline silicon. Ghannam, M. Y.; Dutton, R. W. // Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1222 

    The doping dependence of the resistivity of polycrystalline silicon deposited by low-pressure chemical vapor deposition and implanted with boron is investigated. At doping concentrations <1018 cm-3, the resistivity is almost two orders of magnitude larger than that of crystalline silicon. At...

  • Effect of silver in Bi[sub 1.7]Pb[sub 0.3]Sr[sub 2-x]Ag[sub x]Ca[sub 2]Cu[sub 3]O[sub y]. Yu, Y.; Jin, X. // Applied Physics Letters;7/24/1995, Vol. 67 Issue 4, p545 

    Examines the synthesis of silver-doped Bi[sub 1.7]Pb[sub 0.3]Sr[sub 2-x]Ag[sub x]Ca[sub 2]Cu[sub 3]O[sub y] superconductor. Effects of silver doping on the melting point of oxide superconductor; Increase in the distance between strontium oxide and copper oxide layers; Creation of oxygen vacancy...

  • Limitations to n-type doping in diamond: The phosphorus-vacancy complex. Jones, R.; Lowther, J. E.; Goss, J. // Applied Physics Letters;10/21/1996, Vol. 69 Issue 17, p2489 

    In spite of large concentrations of phosphorus being incorporated into diamond, the material often remains insulating. It is argued that this occurs through the formation of phosphorus-vacancy complexes which are deep acceptors and compensate any donor. The complex is analyzed using a...

  • Broadband semiconductor superlattice detector for THz radiation. Klappenberger, F.; Ignatov, A. A.; Winnerl, S.; Schomburg, E.; Wegscheider, W.; Renk, K. F.; Bichler, M. // Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1673 

    We report on a broadband GaAs/AlAs superlattice detector for THz radiation; a THz field reduces the current through a superlattice, which is carried by miniband electrons, due to modulation of the Bloch oscillations of the miniband electrons. We studied the detector response, by use of a free...

  • Doping superlattices in GaP. Kitamura, M.; Cohen, R. M.; Stringfellow, G. B. // Journal of Applied Physics;2/15/1987, Vol. 61 Issue 4, p1533 

    Presents a study that reported the observation of photoluminescence (PL) from a superlattice with a band gap which is indirect in both real space and k space. Description of doping (n-i-p-i) superlattices; Characterization of GaP doping; Phonon replicas of n-i-p-i PL peak.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics