Effects of ion beam defect engineering on carrier concentration profiles in 50 keV

Qing-tai Zhao; Zhong-lie Wang; Tian-bing Xu; Pei-ran Zhu; Jun-si Zhou
June 1993
Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3183
Academic Journal
Examines the effects of ion beam defect engineering on carrier concentration profiles in phosphorus ion-implanted silicon(100). Role of point defects in the diffusion process; Formation of an amorphous layer by Si ion irradiation; Use of proximity gathering in leakage current reduction.


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