Reduction of interface-trap density in metal-oxide-semiconductor devices by irradiation

Balasinski, Artur; Ma, T.P.
June 1993
Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3170
Academic Journal
Demonstrates the annealing of interface defects in metal oxide semiconductor (MOS) devices by x-ray irradiation. Effects of high-field Fowler-Nordheim electron injection on rad-hard devices; Use of the capacitance-voltage technique to characterize MOS devices; Occurrence of x-ray-induced annealing effect in rad-hard oxides.


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