TITLE

Real-time, in situ monitoring of surface reactions during plasma passivation of GaAs

AUTHOR(S)
Aydil, Eray S.; Zhen Zhou; Giapis, Konstantinos P.; Chabal, Yves; Gregus, Jeffrey A.; Gottscho, Richard A.
PUB. DATE
June 1993
SOURCE
Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3156
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the surface chemistry during gallium arsenide plasma passivation. Application of total reflection Fourier transform infrared spectroscopy; Measurement of bond concentrations as a function of effluent exposure; Use of photoluminescence intensity for surface state reduction.
ACCESSION #
4329759

 

Related Articles

  • Surface passivation of GaAs. Lee, H. H.; Racicot, R. J.; Lee, S. H. // Applied Physics Letters;2/20/1989, Vol. 54 Issue 8, p724 

    We have successfully passivated the surface of n-type (100) GaAs on the basis of P2S5/NH4OH treatment of the surface. A fivefold increase in the photoluminescence (PL) intensity results at room temperature when the surface is passivated and the PL intensity remains the same even after ten...

  • Surface passivation of GaAs with P2S5-containing solutions. Wang, Yun; Darici, Yesim; Holloway, Paul H. // Journal of Applied Physics;3/15/1992, Vol. 71 Issue 6, p2746 

    Examines the surface chemistry of gallium arsenide (GaAs) passivated wih P[sub2]S[sub5] solutions modified with sulfur and other sulfides. Reason for the interest in surface passivation of GaAs; Measurement of the degree of passivity achieved; Collection of room-temperature photoluminescence data.

  • Study of novel chemical surface passivation techniques on GaAs pn junction solar cells. Mauk, M. G.; Xu, S.; Arent, D. J.; Mertens, R. P.; Borghs, G. // Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p213 

    Novel methods of GaAs surface passivation are investigated. Passivation is acheived by simple chemical treatments using aqueous solutions of Na2S, KOH, RuCl3, and K2Se. GaAs pn homojunction solar cells are used to evaluate the effectiveness of these passivation techniques. A significant...

  • Sulfur passivation of GaAs surfaces: A model for reduced surface recombination without band flattening. Spindt, C. J.; Spicer, W. E. // Applied Physics Letters;10/16/1989, Vol. 55 Issue 16, p1653 

    It has been shown by several workers that the passivation of GaAs surfaces using sulfides results in a large reduction in the surface recombination velocity accompanied by an increase in the band bending on n-type samples. This apparently contradictory pair of results leads to the suggestion...

  • The influence of thermal preanneals on the hydrogen passivation efficiency in liquid encapsulated Czochralski-grown GaAs. Stievenard, D.; Boddaert, X.; von Bardeleben, H. J. // Journal of Applied Physics;5/1/1990, Vol. 67 Issue 9, p4385 

    Deals with a study which examined the impact of thermal preanneals on the hydrogen passivation efficiency in liquid encapsulated Czochralski-grown gallium arsenide. Effect of thermal preanneals on native defects; Microscopic identification of EL2 defect; Comparison of the profile of the defects.

  • Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs. Lloyd-Hughes, J.; Merchant, S. K. E.; Fu, L.; Tan, H. H.; Jagadish, C.; Castro-Camus, E.; Johnston, M. B. // Applied Physics Letters;12/4/2006, Vol. 89 Issue 23, p232102 

    The carrier dynamics of photoexcited electrons in the vicinity of the surface of (NH4)2S-passivated GaAs were studied via terahertz emission spectroscopy and optical-pump terahertz-probe spectroscopy. Terahertz emission spectroscopy measurements, coupled with Monte Carlo simulations of terahertz...

  • GaAs surface passivation by deposition of an ultrathin InP-related layer.  // Applied Physics Letters;7/19/1993, Vol. 63 Issue 3, p379 

    Examines the surface passivation of gallium arsenide (GaAs) by deposition of an ultrathin indium phosphide layer. Enhancement of the photoluminescence intensity at GaAs band edge; Observation of surface pinning relaxation by x-ray photoelectron spectroscopy; Concept of surface passivation by...

  • Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen. del Keijser, M.; van Opdorp, C. // Applied Physics Letters;3/18/1991, Vol. 58 Issue 11, p1187 

    Demonstrates an alternative method for the atomic layer epitaxy (ALE) growth of gallium arsenide (GaAs) with TMG and arsine that makes use of a pulse atomic hydrogen source for speeding up surface kinetics. Observation of the decomposing activity of internally generated atomic hydrogen that is...

  • Se chemical passivation and annealing treatment for GaAs Schottky diode. Huaiqi Xu; Belkouch, Said // Applied Physics Letters;4/17/1995, Vol. 66 Issue 16, p2125 

    Examines the role of selenium chemical passivation in improving electrical properties of gallium arsenide semiconductor devices. Effects of annealing treatment on ammonium sulfide passivated Schottky; Characteristics of Schottky diodes; Formation of gallium selenide following selenium passivation.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics