Temperature control during chemical vapor deposition of polycrystalline silicon with substrate

Buchta, R.; Zhang, S.-L.; Sigurd, D.; Lindgren, K.
June 1993
Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3153
Academic Journal
Investigates temperature control during chemical vapor deposition of polycrystalline silicon (Si) with substrate heating by microwaves. Variation in surface emissivity; Factors affecting Si emissivity; Influence of emissivity on the substrate temperature.


Related Articles

  • Ion beam induced conductivity in chemically vapor deposited diamond films. Prawer, S.; Hoffman, A.; Kalish, R. // Applied Physics Letters;11/19/1990, Vol. 57 Issue 21, p2187 

    Polycrystalline diamond films deposited by the microwave plasma chemical vapor deposition (CVD) technique onto quartz substrates have been irradiated with 100 keV C and 320 keV Xe ions at room temperature and at 200 °C. The dose dependence of the electrical conductivity measured in situ...

  • Photoelectron and infrared spectroscopy of semi-insulating silicon layers. Trchová, M.; Zemek, J.; Jurek, K. // Journal of Applied Physics;10/1/1997, Vol. 82 Issue 7, p3519 

    Studies semi-insulating polycrystalline silicon layers obtained by chemical vapor deposition from SiH4 and N2O gases. Differential charging of the silicon islands surrounding by a silicon oxide phase; Determination of mean oxygen content; Calculations on the normalized integrated absorption...

  • Spatially resolved photoconductive properties of profiled polycrystalline silicon thin films. Savenije, Tom J.; van Veenendaal, Patrick A. T. T.; de Haas, Matthijs P.; Warman, John M.; Schropp, Ruud E. I. // Journal of Applied Physics;May2002, Vol. 91 Issue 9, p5671 

    To study the mobility and lifetime of charge carriers in thin film polycrystalline silicon deposited by hot-wire chemical vapor deposition, time-resolved microwave conductivity measurements have been performed. Using this technique the change in conductivity in the polycrystalline silicon films...

  • Piezoelectric textures of polycrystalline zinc selenide. Migal�, V. P.; Rom, M. A.; Chugai, O. N. // Technical Physics;Feb99, Vol. 44 Issue 2, p262 

    The preliminary results of an investigation of the structure and electrophysical properties of CVD-grown polycrystalline ZnSe are reported. A weak multicomponent texture is observed which bears upon the piezoelectric effect, the characteristic features of the electric polarization, and the...

  • A uniformity degradation mechanism in rapid thermal chemical vapor deposition. Ozturk, Mehmet C.; Sanganeria, Mahesh K.; Sorrell, F. Yates // Applied Physics Letters;11/30/1992, Vol. 61 Issue 22, p2697 

    Examines the uniformity degradation mechanism in rapid thermal chemical vapor deposition using polycrystalline silicon on silicon dioxide. Use of small temperature variations to initiate degradation; Determination of the absorbed light by the wafer absorptivity of the heat lamp; Analysis of...

  • Steady-state and transient current transport in undoped polycrystalline diamond films. Jauhiainen, Anders; Bengtsson, Stefan; Engström, Olof // Journal of Applied Physics;11/15/1997, Vol. 82 Issue 10, p4966 

    Investigates the steady-state and transient electrical properties of undoped polycrystallined diamond thin films deposit using hot filament chemical vapor deposition on (100)-oriented n-type and p-type silicon substrates. Influence of slow traps on capacitance-voltage characteristics;...

  • Conduction in n+-i-n+ thin-film polycrystalline/silicon devices in relation to the film deposition conditions. Dimitriadis, C. A.; Papadimitriou, L.; Stoemenos, J.; Economou, N. A.; Meakin, D. B.; Coxon, P. A. // Journal of Applied Physics;2/15/1988, Vol. 63 Issue 4, p1104 

    Deals with a study which investigated the correlation between deposition conditions, films morphology and electrical characteristics of undoped polysilicon resistors. Fabrication of low-pressure chemically vapor deposited polycrystalline silicon; Characteristics feature of diffraction rings;...

  • Characterization of acoustic Lamb wave propagation in polycrystalline diamond films by laser ultrasonics. Whitfield, Michael D.; Audic, Barbara; Flannery[a], Colm M.; Kehoe, Liam P.; Crean, Gabriel M.; Jackman[b], Richard B. // Journal of Applied Physics;9/1/2000, Vol. 88 Issue 5, p2984 

    Studies the propagation of acoustic Lamb waves in free standing chemical vapor deposited polycrystalline diamond using a laser ultrasonic technique. Impact of film morphology, quality and thickness on the waves; Influence of temperature on the dispersion characteristics of Lamb wave propagating...

  • Selective deposition of in situ doped polycrystalline silicon by rapid thermal processing chemical vapor deposition. Hsieh, T. Y.; Chun, H. G.; Kwong, D. L. // Applied Physics Letters;12/4/1989, Vol. 55 Issue 23, p2408 

    Selective polycrystalline silicon was successfully deposited and in situ doped wih arsenic for the first time by rapid thermal processing chemical vapor deposition (RTPCVD). The growth kinetics of SiH2Cl2/AsH3/H2 gas system have been studied by examining the dependence of growth rate on...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics