TITLE

Temperature control during chemical vapor deposition of polycrystalline silicon with substrate

AUTHOR(S)
Buchta, R.; Zhang, S.-L.; Sigurd, D.; Lindgren, K.
PUB. DATE
June 1993
SOURCE
Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3153
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates temperature control during chemical vapor deposition of polycrystalline silicon (Si) with substrate heating by microwaves. Variation in surface emissivity; Factors affecting Si emissivity; Influence of emissivity on the substrate temperature.
ACCESSION #
4329758

 

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