Dependence of electron accumulation in AlSb/InAs quantum well on thin surface materials of InAs

Furukawa, A.
June 1993
Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3150
Academic Journal
Examines the role of thin surface material in electron accumulation of an aluminum antimonide/indium arsenide (InAs) quantum-well systems. Comparison of surface pinning positions between InAs and gallium antimonide; Relation between surface pinning and electron density; Influence of surface thickness on pinning.


Related Articles

  • InAsP islands at the lower interface of InGaAs/InP quantum wells grown by metalorganic chemical.... Bohrer, J.; Krost, A. // Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2258 

    Examines the dependence of the interface structure in thin indium-gallium arsenide/indium phosphide quantum wells on the gas switching sequence. Observation of the transition of monolayer splitting by photoluminescence; Attribution of the transition to a phosphorus-arsenic exchange; Factor...

  • Optical reading of field-effect transistors by phase-space absorption quenching in a single InGaAs quantum well conducting channel. Chemla, D. S.; Bar-Joseph, I.; Klingshirn, C.; Miller, D. A. B.; Kuo, J. M.; Chang, T. Y. // Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p585 

    We present the first observation of absorption quenching by electrical control of the carrier density in a single semiconductor quantum well used as conducting channel in a field-effect transistor. The effect is large enough to allow direct reading of the transistor logic state.

  • Electron density modulation effect in a quantum-well infrared phototransistor. Ryzhii, V.; Ershov, M. // Journal of Applied Physics;7/15/1995, Vol. 78 Issue 2, p1214 

    Presents a study which examined electron density modulation effect in a quantum-well infrared phototransistor. Discussion on the effect of the electron tunneling from the quantum well; Equilibrium electron concentration in the quantum well; Current-voltage characteristics and responsivity.

  • Weak carrier localization on the (1010) tellurium surface. Averkiev, N. S.; Pikus, G. E. // Physics of the Solid State;Sep97, Vol. 39 Issue 9, p1481 

    A theory of weak localization responsible for the negative magnetoresistance effect is developed for quantum wells at the (10&1macr;0) tellurium surface, which retains, in contrast to the (&1macr;2&1macr;0) surface considered earlier, a trigonal spectrum distortion with opposite signs near the M...

  • Evidence of nonuniform carrier distribution in multiple quantum well lasers. Yamazaki, Hiroyuki; Tomita, Akihisa // Applied Physics Letters;8/11/1997, Vol. 71 Issue 6, p767 

    Examines the carrier distribution in multiple quantum well lasers. Measurement of laser wavelength; Dependence of wavelength transition on temperature; Invalidity of the conventional capture/escape model; Importance of the mean free path of unbound carriers.

  • Theoretical analysis of dynamic response of asymmetric dual quantum well lasers. Ikeda, Sotomitsu; Shimizu, Akira // Applied Physics Letters;8/31/1992, Vol. 61 Issue 9, p1016 

    Analyzes the dynamic responses of photon and carrier densities in an asymmetric dual quantum well lasers. Composition of the laser; Implication of the calculated pulse response for wavelength emission; Factors attributed to the occurrence of the lasing time lag.

  • Streaming distribution of two-dimensional electrons in III-N heterostructures for electrically pumped terahertz generation. Korotyeyev, V. V.; Kochelap, V. A.; Kim, K. W.; Woolard, D. L. // Applied Physics Letters;4/21/2003, Vol. 82 Issue 16, p2643 

    We studied anisotropic electron distributions in group-III-nitride quantum wells and analyzed formation of the streaming regime under moderate electric fields. We found that the streaming effect can occur in high-mobility heterostructures (μ ⩾ 30 000 cm[SUP2]/V s) with low electron...

  • Photoluminescence nonlinearities in mixed type I–type II quantum well heterostructures. Finkman, E.; Planel, R. // Applied Physics Letters;5/18/1998, Vol. 72 Issue 20 

    We report on nonlinear behavior of the intensities and the energies of photoluminescence lines in mixed type I–type II quantum well heterostructures. The structures under study consist of a single enlarged quantum well (SQW), embedded in type II short period superlattices (SPS) on both...

  • Study of the morphology of the InAs-on-AlSb interface. Wong, K.C.; Yang, Celeste; Thomas, Mason; Blank, Hans-Richard // Journal of Applied Physics;11/15/1997, Vol. 82 Issue 10, p4904 

    Studies various InAs-on-AlSb interface structures grown by molecular beam epitaxy. Use of an atomic force microscope; Correlation between the interface configuration and the electron mobility in the InAs quantum well; Performance of transport measurements on the corresponding quantum well...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics