TITLE

Dependence of electron accumulation in AlSb/InAs quantum well on thin surface materials of InAs

AUTHOR(S)
Furukawa, A.
PUB. DATE
June 1993
SOURCE
Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3150
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the role of thin surface material in electron accumulation of an aluminum antimonide/indium arsenide (InAs) quantum-well systems. Comparison of surface pinning positions between InAs and gallium antimonide; Relation between surface pinning and electron density; Influence of surface thickness on pinning.
ACCESSION #
4329757

 

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