A High resolution Si position sensor

Scott, K.A.M.; Sharma, A.K.; Wilson, C.M.; Mullins, B.W.; Soares, S.F.; Brueck, S.R.J.
June 1993
Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3141
Academic Journal
Describes the planar back-to-back Schottky-barrier silicon position sensor. Vibration-limited optical-position sensitivity of the device; Relation between circuit photocurrent response and detector gap; Response time of the unbiased device.


Related Articles

  • Ballistic-electron-emission microscopy characteristics of reverse-biased Schottky diodes. Davies, A.; Craighead, H.G. // Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2833 

    Examines the use of ballistic-electron-emission microscopy to study gold/silicon Schottky diodes under reverse-bias conditions. Effects of reverse bias on the barrier height and collection efficiency of electron transport; Reduction of backscattered electrons; Determination of the interface...

  • Barrier Height and Tunneling Current in Schottky Diodes with Embedded Layers of Quantum Dots. Yakimov, A. I.; Dvurechenskiı, A. V.; Nikiforov, A. I.; Chaıkovskiı, S. V. // JETP Letters;1/25/2002, Vol. 75 Issue 2, p102 

    Electrical characteristics of silicon Schottky diodes containing Ge quantum dot (QD) arrays are investigated. It has been found that the potential barrier height at the metal–semiconductor contact can be controlled by introducing dense QD layers, which is a consequence of the formation of...

  • Characteristics of TiN.../n-Si Schottky diodes deposited by reactive magnetron sputtering. Dimitriadis, C.A.; Patsalas, P. // Journal of Applied Physics;4/15/1999 Part 1 of 2, Vol. 85 Issue 8, p4238 

    Focuses on a study which examined the effects of substrate bias voltage and the deposition temperature on the electrical characteristics of titanium nitride/n-silicon Schottky diodes. Experimental details; Results and discussion; Conclusions.

  • Effect of annealing on the Schottky barrier height of Al/n-Si Schottky diodes after Ar+ ion bombardment. Carr, B. A.; Friedland, E.; Malherbe, J. B. // Journal of Applied Physics;11/1/1988, Vol. 64 Issue 9, p4775 

    Presents a study that examined the effect of annealing on the voltage-current characteristics of the Schottky contacts of an aluminum/n-silicon Schottky diodes after argon[sup+] ion bombardment. Methodology; Effect of annealing on the Schottky barrier height; Analysis of the depth profile of...

  • Electrically active defects in silicon after excimer laser processing. Hartiti, B.; Slaoui, A.; Muller, J. C.; Siffert, P. // Journal of Applied Physics;10/15/1989, Vol. 66 Issue 8, p3934 

    Presents a study that examined the presence of electrically-active defects in a silicon Schottky diode after excimer laser processing, using deep-level transient spectroscopy. Methodology; Comparison of the detected defects with those observed after solid-state laser annealing in silicon;...

  • Low Loss Configuration for Integrated PIN-Schottky Limiters. Chin Leong Lim // Microwave Journal;Aug2014 Supplement, p40 

    The article offers information on the low loss configuration for integrated PIN-Schottky limiters and summarizes the performance improvements using a lowpass π configuration in a limiter. Topics discussed include the higher loss resulted by extra diode in the Schottky-PIN limiter than the...

  • Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H–SiC Schottky diodes. Wang, Y.; Ali, G. N.; Mikhov, M. K.; Vaidyanathan, V.; Skromme, B. J.; Raghothamachar, B.; Dudley, M. // Journal of Applied Physics;1/1/2005, Vol. 97 Issue 1, p013540 

    Defects in SiC degrade the electrical properties and yield of devices made from this material. This article examines morphological defects in 4H–SiC and defects visible in electron beam-induced current (EBIC) images and their effects on the electrical characteristics of Schottky diodes....

  • Low-frequency noise and current–voltage characteristics of Schottky barrier contacts in a wide temperature range. Bozhkov, V. G.; Kuzyakov, D. Ju. // Journal of Applied Physics;10/15/2002, Vol. 92 Issue 8, p4502 

    The low-frequency (1/f) noise and current -- voltage characteristics of GaAs and Si Schottky barrier diodes are studied over a wide temperature range: 77-400 K. The peculiarities of temperature and current dependences of the spectral intensity (SI) of current fluctuations S[SUBi](I, T) (a...

  • Effect of Metal on Characteristics of MPc Organic Diodes. Benhaliliba, M.; Ocak, Y. S.; Benouis, C. E. // Journal of Nano- & Electronic Physics;2014, Vol. 6 Issue 4, p04009-1 

    The fabrication and electrical characterization of metal phthalocyanine MPc organic diodes have been investigated. The Au / MPc / Si Schottky diodes are fabricated via a spin coating route. Based on the electrical measurement of the current versus bias voltage in dark conditions we extract the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics