TITLE

Occurrence of layerlike growth mode in the formation of hydrogenated amorphous silicon film on

AUTHOR(S)
Kawasaki, Mitsuo; Kawaguchi, Yusuke
PUB. DATE
June 1993
SOURCE
Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3099
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the growth mechanism of hydrogenated amorphous silicon film on graphite from SiH[sub 3] radicals. Application of x-ray photoelectron spectroscopy; Use of a small deposition rate and an inert graphite substrate; Approximation of single-exponential decay with deposition time.
ACCESSION #
4329739

 

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