Occurrence of layerlike growth mode in the formation of hydrogenated amorphous silicon film on

Kawasaki, Mitsuo; Kawaguchi, Yusuke
June 1993
Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3099
Academic Journal
Examines the growth mechanism of hydrogenated amorphous silicon film on graphite from SiH[sub 3] radicals. Application of x-ray photoelectron spectroscopy; Use of a small deposition rate and an inert graphite substrate; Approximation of single-exponential decay with deposition time.


Related Articles

  • Characteristics of Carbon Films Deposited by Magnetron Sputtering. Mróz, W.; Burdyńska, S.; Prokopiuk, A.; Jedyński, M.; Budner, B.; Korwin-Pawlowski, M. L. // Acta Physica Polonica, A.;Dec2009 Supplement, Vol. 116, pS.120 

    Carbon thin films are often called in the literature, "diamond-like carbon" films. They consist of two basic allotropic forms of carbon, which are graphite and diamond. Carbon atoms with sp² bonds form after deposition of a graphite-like phase. Atoms with sp³ bonds form a diamond-like...

  • Effect of substrate material on the rate of growth and the optical parameters of a-C : H layers. Zvonareva, T. K.; Sharonova, L. V. // Semiconductors;Jun99, Vol. 33 Issue 6, p684 

    a-C:H layers were grown by dc magnetron reactive sputtering of a graphite target in Ar + H[sub 2] plasma. Ellipsometric measurements were carried out and analyzed at a wavelength of 6328 � for three sets of a-C:H layers with different thicknesses (different sputtering times) on silicon,...

  • Graphitization of amorphous carbon at high pressures to 15 GPa. Onodera, Akifumi; Irie, Yasushi; Higashi, Koji; Umemura, Junzo; Takenaka, Tohru // Journal of Applied Physics;2/15/1991, Vol. 69 Issue 4, p2611 

    Presents a study that examined graphitization of amorphous carbon at high static pressures. Temperature range by which the carbon has been examined; Transformation of the carbon into graphite; Stages of the graphitization process.

  • Electrical and Photoelectric Properties of a-Si:H Layered Films: The Influence of Thermal Annealing. Kurova, I. A.; Ormont, N. N.; Terukov, E. I.; Trapeznikova, I. N.; Afanas�ev, V. P.; Gudovskikh, A. S. // Semiconductors;Mar2001, Vol. 35 Issue 3, p353 

    The electrical and photoelectric properties of layered a-Si:H films obtained by cyclic plasmochemical deposition and the effect of thermal annealing on these properties have been studied. Unannealed films demonstrate high photosensitivity, with a photoconductivity to dark conductivity ratio of K...

  • Investigation of surface passivation of amorphous silicon using photothermal deflection spectroscopy. Frye, R. C.; Kumler, J. J.; Wong, C. C. // Applied Physics Letters;1/12/1987, Vol. 50 Issue 2, p101 

    We have used photothermal deflection spectroscopy to examine optical absorption in amorphous silicon films using a variety of surface passivation techniques. Absorption coefficients well below the band gap in these films are strongly influenced by surface state densities. Surfaces oxidized by...

  • Effect of Nanocrystalline Inclusions on the Photosensitivity of Amorphous Hydrogenated Silicon Films. Golikova, O. A.; Kazanin, M. M. // Semiconductors;Jun2000, Vol. 34 Issue 6, p737 

    Photosensitivity of amorphous hydrogenated silicon films containing inclusions of Si nanocrystals, along with spectral characteristics of photoconductivity, were studied. A correlation between photosensitivity and features of the Raman spectra was established. The highest photosensitivity is...

  • Anisotropic patterns formed in Ag-As-S ion-conducting amorphous semiconductor films by polarized... Tanaka, Keiji; Gotoh, Tamihiro // Applied Physics Letters;10/11/1999, Vol. 75 Issue 15, p2256 

    Studies anisotropic surface corrugation in amorphous semiconductor films of Ag-As-S. Typical pattern produced in an amorphous film; Surface modifications appearing in the films; Kinds of photoinduced optical anisotropies that appeal on solids.

  • Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics. Ferlauto, A. S.; Ferreira, G. M.; Pearce, J. M.; Wronski, C. R.; Collins, R. W.; Deng, Xunming; Ganguly, Gautam // Journal of Applied Physics;9/1/2002, Vol. 92 Issue 5, p2424 

    We have developed a Kramers-Kronig consistent analytical expression to fit the measured optical functions of hydrogenated amorphous silicon (a-Si:H) based alloys, i.e., the real and imaginary parts of the dielectric function (∈[sub 1], ∈[sub 2]) (or the index of refraction n and...

  • Hydrogenated amorphous silicon formation by flux control and hydrogen effects on the growth mechanism. Toyoda, H.; Sugai, H.; Kato, K.; Yoshida, A.; Okuda, T. // Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1648 

    The composition of particle flux to deposit hydrogenated amorphous silicon films in a glow discharge is controlled by a combined electrostatic-magnetic deflection technique. As a result, the films are formed firstly without hydrogen ion flux, secondly by neutral flux only, and thirdly by all...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics