TITLE

Strain effects in the intersubband transitions of narrow InGaAs quantum wells

AUTHOR(S)
Peng, L.H.; Smet, J.H.; Broekaert, T.P.E.; Fonstad, C.G.
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2413
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the uniaxial stress effects in the intersubband transition of narrow silicon-doped InGaAs single quantum wells (QW). Use of polarization-resolved infrared spectroscopy; Effect of strain perturbation of crystal potential on the intersubband transition; Magnitude of the linear strain intersubband deformation potential of QW.
ACCESSION #
4329715

 

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