Observation of a delocalized E' center in buried SiO[sub 2]

Vanheusden, K.; Stesmans, A.
May 1993
Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2405
Academic Journal
Examines the oxygen-vacancy defects generated at the surface of buried silica layers of the separation by oxygen structure implantation. Use of K-band electron spin resonance; Identification of a delocalized variant of the defect center; Correlation between the defects and substrate bias conditions; Proposal of a model for defect interpretation.


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