TITLE

Observation of a delocalized E' center in buried SiO[sub 2]

AUTHOR(S)
Vanheusden, K.; Stesmans, A.
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2405
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the oxygen-vacancy defects generated at the surface of buried silica layers of the separation by oxygen structure implantation. Use of K-band electron spin resonance; Identification of a delocalized variant of the defect center; Correlation between the defects and substrate bias conditions; Proposal of a model for defect interpretation.
ACCESSION #
4329712

 

Related Articles

  • Reduction of secondary defect density by C and B implants in Ge[sub x]Si[sub 1-x] layers formed.... Lombardo, S.; Priolo, F.; Campisano, S.U.; Lagomarsino, S. // Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2335 

    Describes the reduction of secondary defect density in Ge[sub x]Si[sub 1-x] layers by carbon and boron implantation. Production of the layers by high dose germanium ion implantation in (100) silicon substrate; Effect of rapid thermal annealing on the layer; Use of transmission electron...

  • Evolution of point to extended defects in low-temperature implanted Hg0.76Cd0.24Te. Richter, V.; Kalish, R. // Journal of Applied Physics;5/15/1990, Vol. 67 Issue 10, p6578 

    Presents a study which investigated the evolution of point to extended defects in low-temperature ion-implanted Hg[sub1-x]Cd[subx]Te. Details of experimental techniques used; Characterization of HgCdTe damages induced by room-temperature ion implantation; Reason for the diffusion of atoms in...

  • Reduced threshold ultraviolet laser ablation of glass substrates with surface particle coverage: A mechanism for systematic surface laser damage. Kane, D. M.; Halfpenny, D. R. // Journal of Applied Physics;5/1/2000, Vol. 87 Issue 9, p4548 

    A recent study of ultraviolet laser cleaning of silica glass surfaces contaminated with medium density alumina particles has shown a systematic type of laser-induced surface damage. This is characterized as a pit which increases in diameter and depth with increasing irradiating fluence. The...

  • Electron spin resonance studies on buried oxide silicon-on-insulator. Makino, T.; Takahashi, J. // Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p267 

    Electron spin resonance is used to study defects in high-dose oxygen-ion implanted Si substrates. By this implantation, a crystalline Si/buried SiO2/crystalline Si structure is created. Two kinds of defect centers are found; one is assigned to the amorphous center, and the other, the Pb0 center,...

  • A slow positron beam study of vacancy formation in fluorine-implanted silicon. Fujinami, M.; Chilton, N. B. // Journal of Applied Physics;4/1/1993, Vol. 73 Issue 7, p3242 

    Discusses the results of a study on vacancy formation in fluorine-implanted silicon using a slow positron beam. Consequence of positron diffusion and the breadth of the positron implantation profile; Implications of the vacancies caused by ion implantation; Techniques used in demonstrating the...

  • Reduced defect density in silicon-on-insulator structures formed by oxygen implantation in two steps. Margail, J.; Stoemenos, J.; Jaussaud, C.; Bruel, M. // Applied Physics Letters;2/6/1989, Vol. 54 Issue 6, p526 

    Up to now, the best quality silicon-on-insulator material formed by high-dose oxygen ion implantation has been produced by conventional one step implantation and subsequent high-temperature annealing. Nevertheless, it still contains structural defects: threading dislocations in the top silicon...

  • Dependence of ion implantation: Induced defects on substrate doping. Kanemoto, Kei; Imaizumi, Fuminobu; Hamada, Tatsufumi; Tamai, Yukio; Nakada, Akira; Ohmi, Tadahiro // Journal of Applied Physics;3/15/2001, Vol. 89 Issue 6, p3156 

    The characteristics of an ion implantation-induced defect in a silicon substrate are investigated. This defect is considered to be a complex of a point defect and a substrate dopant atom. The experiments are conducted by focusing on the dependence of the substrate dopant species (phosphorus and...

  • Hydrogen interactions with delocalized spin centers in buried SiO[sub 2] thin films. Warren, W.L.; Schwank, J.R.; Shaneyfelt, M.R.; Fleetwood, D.M.; Winokur, P.S. // Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1661 

    Examines the nature of defects in irradiated bonded and etchback silicon-on-insulator buried silica thin films. Use of electron paramagnetic resonance method; Categorization of the defects; Role of irradiation in positive charge generation in the dielectric.

  • Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation. Pellegrino, P.; Léveque, P.; Wong-Leung, J.; Jagadish, C.; Svensson, B. G. // Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3442 

    An experimental concept of studying shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion-implanted silicon is demonstrated. This concept is based on deep level transient spectroscopy measurements where the filling pulse width is varied. The vacancy...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics