High temperature characteristics of InGaAsP/InP laser structures

Temkin, H.; Coblentz, D.; Logan, R.A.; van der Ziel, J.P.; Tanbun-Ek, T.; Yadvish, R.D.; Sergent, A.M.
May 1993
Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2402
Academic Journal
Investigates the high temperature performance of indium gallium arsenic phosphide laser operating at a wavelength of 1.3 micrometer. Comparison between conventional separate confinement heterostructure and compressively strained multiquantum well structure; Link between threshold gain and operating temperature.


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