TITLE

High-power InGaN/GaN double-heterostructure violet light emitting diodes

AUTHOR(S)
Nakamura, Shuji; Senoh, Masayuki; Mukai, Takashi
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2390
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Fabricates a high-power InGaN/GaN double-heterostructure violet light emitting diodes. Growth of the film by metalorganic chemical vapor deposition method; Dependence of electroluminescence wavelength on growth temperature; Determination of the optimum output power and the external quantum efficiency.
ACCESSION #
4329707

 

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