High-power InGaN/GaN double-heterostructure violet light emitting diodes

Nakamura, Shuji; Senoh, Masayuki; Mukai, Takashi
May 1993
Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2390
Academic Journal
Fabricates a high-power InGaN/GaN double-heterostructure violet light emitting diodes. Growth of the film by metalorganic chemical vapor deposition method; Dependence of electroluminescence wavelength on growth temperature; Determination of the optimum output power and the external quantum efficiency.


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