Optical characterization of pure ZnSe films grown on GaAs

Young-Dong Kim; Cooper, S.L.; Klein, M.V.; Jonker, B.T.
May 1993
Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2387
Academic Journal
Measures the dielectric function of a zinc selenide film grown gallium arsenide substrate using spectroscopic ellipsometry. Growth of the sample by molecular beam epitaxy; Removal of a natural surface oxide overlayer on ZnSe; Application of chemical etching procedure.


Related Articles

  • Observation of ZnSe/GaAs interface states by photomodulation reflectance difference spectroscopy. Yang, Z.; Chen, Y.H. // Applied Physics Letters;7/26/1999, Vol. 75 Issue 4, p528 

    Presents observations of zinc selenide/gallium arsenide interface states by photomodulation reflectance difference spectroscopy. Light-sensitive part of the resonance; Release of the captured electrons through more than one channel.

  • Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/GaAs by phase selection in... Constantino, M.E.; Navarro-Contreras, H. // Journal of Applied Physics;7/1/1999, Vol. 86 Issue 1, p425 

    Studies the optical properties of gallium arsenide (GaAs) at zinc selenide/GaAs interfaces using phase selective photoreflectance (PR) spectroscopy. Importance of PR in characterizing bulk semiconductors; Details on the experiment; PR spectra of GaAs.

  • Optical constants and critical-point parameters of GaAs from 0.73 to 6.60 eV. Zollner, Stefan // Journal of Applied Physics;7/1/2001, Vol. 90 Issue 1, p515 

    The optical constants of GaAs from 0.73 to 6.60 eV at 300 K were determined using rotating-analyzer spectroscopic ellipsometry. The setup includes a computer-controlled MgF[sub 2] Berek wave plate compensator, which allows exact measurements of the ellipsometric angle Δ below the band gap....

  • Model dielectric function spectra of GaAsN for far-infrared and near-infrared to ultraviolet wavelengths. Leibiger, G.; Gottschalch, V.; Rheinla¨nder, B.; Sik, J.; Schubert, M. // Journal of Applied Physics;5/1/2001, Vol. 89 Issue 9, p4927 

    We study the optical properties of tensile strained GaAs[sub 1-y]N[sub y] (0%≤y≤3.7%) single layers for photon energies from 0.75 to 4.5 eV and for wave numbers from 100 to 600 cm-1 using spectroscopic ellipsometry. The intentionally undoped GaAsN layers were grown pseudomorphically...

  • Lasing in a ZnS0.12Se0.88/ZnSe multilayer structure with photopumping. Suemune, I.; Yamada, K.; Masato, H.; Kan, Y.; Yamanishi, M. // Applied Physics Letters;3/13/1989, Vol. 54 Issue 11, p981 

    Photopumped lasing in a ZnS0.12Se0.88/ZnSe multilayer structure up to 180 K is reported for the first time. The films were grown by metalorganic vapor phase epitaxy on (001) GaAs. The purpose of using the multilayer structure is to prevent the diffusion of the photoexcited carriers to have...

  • Low stacking-fault density in ZnSe epilayers directly grown on epi-ready GaAs substrates without GaAs buffer layers. Hong, Soon-Ku; Kurtz, Elisabeth; Chang, Ji-Ho; Hanada, Takashi; Oku, Masaoki; Yao, Takafumi // Applied Physics Letters;1/8/2001, Vol. 78 Issue 2, p165 

    We report a remarkably low stacking-fault density in ZnSe epilayers directly grown on commercial epi-ready GaAs (001) substrates without GaAs buffer layer growth. It is found that proper pregrowth treatments on epi-ready GaAs (001) substrates to obtain clean surfaces are crucial for...

  • Investigation of the early stages of ZnSe epitaxy on GaAs(001) via scanning tunneling microscopy. Ahsan, S.; Khan, A. // Applied Physics Letters;10/13/1997, Vol. 71 Issue 15, p2178 

    Investigates the initial stages of zinc selenide deposition on the gallium arsenide (GaAs)(001)-(2x2) surface. Induction of atomic disorder from selenium-arsenic exchange reaction; Effect of zinc deposition on surface periodicity; Role of zinc for the interaction of selenium with the GaAs surface.

  • ZnSe/GaAs interface state probed by time-resolved reflectance difference spectroscopy. Wong, K.S.; Wang, H. // Applied Physics Letters;6/14/1999, Vol. 74 Issue 24, p3663 

    Applies time-resolved reflectance difference spectroscopy (TRDS) to study the dynamics and relaxation processes of the zinc selenide (ZnSe)/gallium arsenide (GaAs) interface state associated with Zn-As bonds. Rapid cooling of hot carrier in the spectral region above the ZnSe band edge;...

  • Strain profiles in overcritical (001) ZnSe/GaAs heteroepitaxial layers. Kontos, A.G.; Anastassakis, E. // Journal of Applied Physics;7/1/1999, Vol. 86 Issue 1, p412 

    Studies the strain profiles of zinc selenide/gallium arsenide (ZnSe/GaAs) heteroepitaxial layers using x-ray diffraction and Raman scattering. Application of ZnSe/GaAs heteroepitaxial layers; Sample preparation and experimental setup; Structural characteristics of the sample; Results of the study.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics