Atomic layer epitaxy of GaAs with a 2 mum/h growth rate

Dip, Anthony; Eldallal, Gamal M.; Colter, Peter C.; Hayafuji, N.; Bedair, S.M.
May 1993
Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2378
Academic Journal
Describes the achievement of atomic layer epitaxy growth rates of two micrometer/hour for gallium arsenide. Rapid rotation of substrate between simultaneous streams of columns III and V reactant gases; Prevention of gas streams mixing; Implications of growth rate reduction for carbon background doping.


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