TITLE

High-speed InP/InGaAs double-heterostructure bipolar transistors with suppressed collector

AUTHOR(S)
Kurishima, K.; Nakajima, H.; Kobayashi, T.; Matsuoka, Y.; Ishibashi, T.
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2372
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Fabricates a double-heterostructure bipolar transistor using InP and InGaAs materials. Pair doping at the heterointerface; Capability of suppressing collector current blocking; Use of metalorganic chemical vapor deposition; Electron transport properties of the InP collector.
ACCESSION #
4329701

 

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