Nanometer scale fabrication in mercury cadmium telluride using methane/hydrogen electron

Eddy Jr., C.R.; Dobisz, E.A.; Hoffman, C.A.; Meyer, J.R.
May 1993
Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2362
Academic Journal
Describes the fabrication of nanometer scale features in the narrow gap, compound semiconductor mercury cadmium telluride. Application of electron-beam lithography and reactive ion etching; Effect of methane concentration and substrate bias on etch rate; Use of scanning electron microscopy.


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