TITLE

Carbon doping in GaAs layers grown with trimethylgallium and solid arsenic in a mixture of

AUTHOR(S)
Pena-Sierra, R.; Escobosa, A.; Sanchez-R., V.M.
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2359
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the carbon doping of p-type gallium arsenide epitaxial layers. Deposition of the layer by metalorganic vapor phase epitaxy system using solid arsenic and trimethylgallium; Dependence of carbon incorporation on hydrogen partial pressure; Effect of nitrogen gas introduction into the carrier gas on the growth rate.
ACCESSION #
4329695

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics