C54-TiSi[sub 2] formed by direct high current Ti-ion implantation

Zhu, D.H.; Tao, K.; Pan, F.; Liu, B.X.
May 1993
Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2356
Academic Journal
Describes the formation of carbon54-titanium silicide by direct titanium ion implantation into silicon wafers. Use of a metal vapor vacuum arc ion source; Conduction of ion implantation with various ion current densities; Interpretation of the formation mechanism; Effect of beam heating during ion implantation.


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