Defect generation sensitivity depth profile in buried SiO[sub 2] using Ar plasma exposure

Stesmans, A.; Vanheusden, K.
May 1993
Applied Physics Letters;5/3/1993, Vol. 62 Issue 18, p2277
Academic Journal
Examines the defect generation sensitivity depth profile in buried silica (BOX) using argon plasma exposure. Application of the electron spin resonance; Determination of local volume densities at the surface; Reoxidation of the BOX layers.


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