TITLE

Electrical properties of the SiN[sub x]/InP interface passivated using H[sub 2]S

AUTHOR(S)
Kapila, A.; Si, X.; Malhotra, V.
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/3/1993, Vol. 62 Issue 18, p2259
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the electrical properties of the SiN[sub x]/indium phosphide interface. Passivation of interface using hydrogen sulfide; Exhibition of good capacitance-voltage characteristics; Estimation of the minimum trap density.
ACCESSION #
4329664

 

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