TITLE

Graded InGaAs/GaAs strained-layer single quantum well laser

AUTHOR(S)
Tae-Kyung Yoo; Spencer, Robert; Schaff, William J.; Eastman, Lester F.; Ki-Woong Chung; Doyeol Ahn
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/3/1993, Vol. 62 Issue 18, p2239
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a graded indium gallium arsenide/gallium arsenide strained single quantum well laser. Calculation of the bias-dependencies of valence subbands; Determination of the electron distributions in the conduction bands; Reduction of the electron-hole spatial separation.
ACCESSION #
4329657

 

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