TITLE

Porous silicon formation: Morphological stability analysis

AUTHOR(S)
Ying Kang; Jorne, Jacob
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/3/1993, Vol. 62 Issue 18, p2224
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Analyzes the morphological stability of the photoelectrochemical etching of n-type silicon. Transport of ions in the diffusion layer; Role and effects of various parameters on the morphology of porous silicon; Control of dissolution process by the supply of holes in the semiconductor.
ACCESSION #
4329652

 

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