TITLE

X-ray characterization of Si delta-doping in GaAs

AUTHOR(S)
Hart, L.; Fahy, M.R.; Newman, R.C.; Fewster, P.F.
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/3/1993, Vol. 62 Issue 18, p2218
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the structural properties of a delta-doped superlattice grown by molecular beam epitaxy. Percentage of the period variation; Location of silicon atoms; Use of the high-resolution triple-axis diffractometer.
ACCESSION #
4329650

 

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