Zinc doping of Ga[sub 0.51]In[sub 0.49]P grown on GaAs(100) substrates by chemical beam epitaxy

Kapre, R.M.; Tsang, W.T.; Ha, N.T.; Wu, M.C.; Chen, Y.K.
May 1993
Applied Physics Letters;5/3/1993, Vol. 62 Issue 18, p2212
Academic Journal
Investigates the zinc doping of Ga[sub 0.51]In[sub 0.49]P grown on gallium arsenide(100) substrates by chemical beam epitaxy. Decrease of doping concentration; Determination of the activation energy; Use of the doped samples as cladding layers for strained indium gallium arsenide/gallium arsenide lasers.


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