TITLE

Observation of arsenic precipitates in GaInAs grown at low temperature on InP

AUTHOR(S)
Ibbetson, J.P.; Speck, J.S.; Gossard, A.C.; Mishra, U.K.
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/3/1993, Vol. 62 Issue 18, p2209
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines arsenic precipitates in gallium indium arsenide grown at low temperature on indium phosphide. Use of electron transmission spectroscopy; Effect of high-temperature annealing on arsenic precipitates; Dependence of microstructure on growth temperature.
ACCESSION #
4329647

 

Related Articles

  • Significant increase in the hardness of the ferritic phase due to structural changes at low temperatures in duplex stainless steels. Moreno, J. R. S.; Francisco, J. C. S. // Mechanika;2013, Vol. 19 Issue 3, p344 

    Duplex stainless steel samples were aged at low temperatures of the 300°C and 400°C for 3000, 5000 and 7000 hours. The changes at the micro-structure were followed during the annealing time using an optical microscopy and measurements of phase percentages. Nanohardness was used in order to...

  • Effect of Al3+-Cr3+ Substitution on Structural, Cation Distribution and Magnetic Properties of MgFe2O4 Prepared by Chemical Co-precipitation Method. Jadhav, S. P.; Mote, J. B.; Dhage, V. N.; Mane, M. L.; Shinde, N. D. // AIP Conference Proceedings;7/16/2011, Vol. 1349 Issue 1, p409 

    The low temperature synthesis of Al-Cr substituted MgFe2O4 ferrite system have been carried out using chemical co-precipitation technique at 60 °C. The nanocrystallites of MgAlXCrXFe2-2XO4 ferrite system were characterized by X-ray diffraction technique. The X-ray diffractometer (XRD) showed...

  • Lateral patterning of arsenic precipitates in gallium arsenide by a surface stress structure. Kiehl, R.A.; Saito, M. // Applied Physics Letters;4/24/1995, Vol. 66 Issue 17, p2194 

    Describes the lateral patterning of arsenic (As) precipitation in low temperature-grown gallium arsenide (GaAs). Growth of As precipitates in GaAs layer by molecular beam epitaxy; Control of the precipitate position by indium GaAS stressors covered by silicon dioxide films; Formation of surface...

  • Formation of two-dimensional arsenic-precipitate arrays in GaAs. Melloch, M.R.; Otsuka, N. // Applied Physics Letters;7/13/1992, Vol. 61 Issue 2, p177 

    Investigates the formation of two-dimensional arsenic-precipitate arrays in gallium arsenide. Percentage of excess arsenic in the epilayer; Presence of regions delta doped with silicon (Si), beryllium (Be) and indium (In); Examination of the effects of Si, Be, and In impurities on the...

  • Effects of point defect distribution on arsenic precipitation in low-temperature grown III-V... Chang, M. N.; Hsieh, K. C. // Journal of Applied Physics;9/1/1999, Vol. 86 Issue 5, p2442 

    Presents information on a study which investigated the behavior of arsenic precipitation in low-temperature grown III-V arsenides. Experimental details; Results and discussion; Conclusions.

  • Ga-As liquidus at temperatures below 650 °C. DeWinter, J. C.; Pollack, M. A. // Journal of Applied Physics;9/15/1985, Vol. 58 Issue 6, p2410 

    Presents a study which measured gallium arsenide liquidus composition at low temperatures. Method of the study; Results and discussion; Conclusion.

  • Double-crystal x-ray rocking curve study of (Al,Ga)As:As grown by low temperature molecular beam.... Sacks, R.N.; Carlin, J.A. // Applied Physics Letters;10/13/1997, Vol. 71 Issue 15, p2145 

    Compares the initial incorporation mechanism of excess arsenic between low temperature grown (LTG) (aluminum,gallium)arsenic and LTG gallium arsenide. Differences in the expansion of lattice parameter; Incorporation of arsenic as small precipitates; Reasons for the different incorporation...

  • Reduced thermal conductivity in low-temperature-grown GaAs. Jackson, A. W.; Ibbetson, J. P.; Gossard, A.C.; Mishra, U.K. // Applied Physics Letters;4/19/1999, Vol. 74 Issue 16, p2325 

    Examines reduced thermal conductivity in low-temperature-grown gallium arsenide (GaAs). Measurement of GaAs at room temperature using a self-heated photolithographically patterned platinum wire on the surface; Calculation of the finite element; Reduced thermal conductivity in the as-grown material.

  • European cryogenic material testing program for ITER coils and intercoil structures. Nyilas, A.; Portone, A.; Kiesel, H. // AIP Conference Proceedings;2002, Vol. 614 Issue 1, p123 

    The following materials were characterized for the use in the magnet structures of ITER: 1) Type 316LN cast materials having a modified chemistry used for a Model of the TF (Toroidal Field) outer intercoil structure were investigated with respect to tensile, fracture, fatigue crack growth rate...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics