High-temperature continuous operation above 200 degree C of GaAs lasers using an InGaAlP

Itaya, K.; Hatakoshi, G.; Nishikawa, Y.; Ishikawa, M.; Okajima, M.
May 1993
Applied Physics Letters;5/3/1993, Vol. 62 Issue 18, p2176
Academic Journal
Details the fabrication of a gallium arsenide laser diode employing indium gallium aluminum phosphide for the cladding layer. Reduction of the electron overflow; Improvement of temperature characteristics; Determination of the highest temperature continuous wave operation.


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