TITLE

KrF excimer laser projection patterned deposition of aluminum from triethylamine alane as

AUTHOR(S)
Foulon, F.; Stuke, M.
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/3/1993, Vol. 62 Issue 18, p2173
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the use of krypton fluoride excimer laser images of mask patterns to deposit aluminum on various substrates. Increase of deposited height with laser energy; Rates of depositions; Generation of patterns with one micrometer resolution.
ACCESSION #
4329635

 

Related Articles

  • Influence of oxygen pressure on structural and optical properties of Al[sub 2] O[sub 3] optical waveguides prepared by pulsed laser deposition. Pillonnet, A.; Garapon, C.; Champeaux, C.; Bovier, C.; Brenier, R.; Jaffrezic, H.; Mugnier, J. // Applied Physics A: Materials Science & Processing;1999, Vol. 69 Issue 7, pS735 

    Abstract. Pure and europium doped alumina waveguides have been prepared by Pulsed Laser Deposition using a KrF excimer laser at oxygen pressures in the range from 10[sup -7] to 0.1 mbar. The composition of the films and the doping ion concentration were determined by Rutherford Backscattering...

  • Pulsed laser deposition of aluminum-doped ZnO films at 355 nm. Holmelund, E.; Schou, J.; Thestrup, B.; Tougaard, S.; Johnson, E.; Nielsen, M. M. // Applied Physics A: Materials Science & Processing;2004, Vol. 79 Issue 4-6, p1137 

    Conducting, transparent films of aluminium-doped ZnO (AZO) have been produced at the laser wavelength 355 nm. The most critical property, the electric resistivity, is up to a factor of 8 above that for films produced at shorter wavelengths. In contrast, the transmission of visible light through...

  • All laser-assisted heteroepitaxial growth of Si[sub 0.8]Ge[sub 0.2] on Si(100): Pulsed laser.... Serna, R.; Blasco, A.; Missana, T.; Solis, J.; Alfonso, C.N.; Rodriguez, A.; Rodriguez, T.; da Silva, M.F. // Applied Physics Letters;3/25/1996, Vol. 68 Issue 13, p1781 

    Evaluates the growth of heteroepitaxial Si[sub 0.8]Ge[sub 0.2] thick films on silicon(100) by an all-laser assisted technique. Application of pulsed laser deposition technique; Use of argon fluoride excimer laser; Induction of melting and rapid solidification.

  • Optical absorption spectroscopy study of the rule of plasma chemistry in.... Sakeek, H.F.; Morrow, T.; Graham, W.G.; Walmsley, D.G. // Applied Physics Letters;12/30/1991, Vol. 59 Issue 27, p3631 

    Examines the role of plasma chemistry in YBa[sub 2]Cu[sub 3]O[sub 7] pulsed laser deposition. Techniques used in analyzing the absorption behavior of barium; Importance of the excimer laser ablation in oxide superconductor thin films deposition; Types of diagnostic techniques.

  • Epitaxial growth and surface acoustic wave properties of lithium niobate films grown by pulsed laser deposition. Shibata, Yoshihiko; Kaya, Kiyoshi; Akashi, Kageyasu; Kanai, Masaki; Kawai, Tomoji; Kawai, Shichio // Journal of Applied Physics;2/15/1995, Vol. 77 Issue 4, p1498 

    Presents a study which investigated on the deposition of lithium niobate films on sapphire substrates and using pulsed excimer-laser ablation. Introduction to lithium niobates; Experimental procedure; Results and discussion.

  • Pulsed excimer laser deposition Y1Ba2Cu3O7-x superconductor films on silicon with laser-deposited Y-ZrO2 buffer layer. Ogale, S. B.; Vispute, R. D.; Rao, R. R. // Applied Physics Letters;10/22/1990, Vol. 57 Issue 17, p1805 

    The pulsed excimer laser ablation method is used to deposit both the buffer layer of Y-stabilized ZrO2 and the overlayer of Y1Ba2Cu3O7-x superconductor on (100) oriented single-crystal silicon. Process parameter optimization study is carried out and it is shown that a thin film of the...

  • Preparation and characterization of ferroelectric SrBi[sub 2] Ta[sub 2] O[sub 9] thin films on Si using Al[sub 2] O[sub 3] buffer layers. Liu, X.H.; Liu, Z.G.; Liu, J.M. // Applied Physics A: Materials Science & Processing;2001, Vol. 73 Issue 3, p331 

    SrBi[sub 2] Ta[sub 2] O[sub 9] (SBT) thin films were prepared on p-type Si(100) substrates with Al[sub 2] O[sub 3] buffer layers. Both the SBT films and the Al[sub 2] O[sub 3] buffer layers were deposited by a pulsed laser deposition technique using a KrF excimer laser. An Al prelayer was used...

  • NEWSBREAKS.  // Laser Focus World;Nov2000, Vol. 36 Issue 11, p9 

    Presents news briefs on the optoelectronics sector as of November 2000. Optical parametric oscillator developed by the collaboration between Eidgenossische Technische Hochschule Zurich and Optoelectronics Research Centre in Southampton, England; Use of pulsed laser deposition in the fabrication...

  • Microstructural and compositional variations in laser-deposited superconducting thin films. Singh, R. K.; Biunno, N.; Narayan, J. // Applied Physics Letters;9/12/1988, Vol. 53 Issue 11, p1013 

    We have investigated thickness and composition variations in laser-deposited superconducting thin films and their effects on the microstructure development after subsequent annealing to recover the superconducting properties. Superconducting thin films were deposited on magnesium oxide...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics