Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in

Libsch, F.R.; Kanicki, J.
March 1993
Applied Physics Letters;3/15/1993, Vol. 62 Issue 11, p1286
Academic Journal
Examines the threshold voltage instabilities in nitride/oxide dual gate dielectric hydrogenated amorphous silicon thin film transistors. Use of the multiple trapping model; Inducement of threshold shifts by bias-stress-temperature; Independence of the stress gate bias.


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