Atomic layer etching of GaAs(110) with Br[sub 2] studied by scanning tunneling microscopy

Patrin, J.C.; Li, Y.Z.; Weaver, J.H.
March 1993
Applied Physics Letters;3/15/1993, Vol. 62 Issue 11, p1277
Academic Journal
Applies the scanning tunneling microscopy to determines the atomic layer etching of GaAs(110) with Br[sub 2]. Observation of faster etching at [001] direction; Domination of single-height step flow in etching with higher Br[sub 2] exposure; Formation of extended terraces.


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