TITLE

Atomic layer etching of GaAs(110) with Br[sub 2] studied by scanning tunneling microscopy

AUTHOR(S)
Patrin, J.C.; Li, Y.Z.; Weaver, J.H.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/15/1993, Vol. 62 Issue 11, p1277
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Applies the scanning tunneling microscopy to determines the atomic layer etching of GaAs(110) with Br[sub 2]. Observation of faster etching at [001] direction; Domination of single-height step flow in etching with higher Br[sub 2] exposure; Formation of extended terraces.
ACCESSION #
4329619

 

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