Formation of As precipitates in GaAs by ion implantation and thermal annealing

Claverie, A.; Namavar, Fereydoon; Liliental-Weber, Z.
March 1993
Applied Physics Letters;3/15/1993, Vol. 62 Issue 11, p1271
Academic Journal
Examines the possibility of regrowing an amorphous GaAs layer by high dose As implantation at room temperature. Use of transmission electron microscopy on the structure of the precipitates; Efficacy of the process for the formation of low cost semi-insulating GaAs layers; Presence of defects in the layers.


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