TITLE

Formation of As precipitates in GaAs by ion implantation and thermal annealing

AUTHOR(S)
Claverie, A.; Namavar, Fereydoon; Liliental-Weber, Z.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/15/1993, Vol. 62 Issue 11, p1271
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the possibility of regrowing an amorphous GaAs layer by high dose As implantation at room temperature. Use of transmission electron microscopy on the structure of the precipitates; Efficacy of the process for the formation of low cost semi-insulating GaAs layers; Presence of defects in the layers.
ACCESSION #
4329617

 

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