TITLE

Effect of post-growth cooling ambient on acceptor passivation in carbon-doped GaAs grown by

AUTHOR(S)
Stockman, S.A.; Hanson, A.W.; Jackson, S.L.; Baker, J.E.; Stillman, G.E.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/15/1993, Vol. 62 Issue 11, p1248
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the effect of post-growth cooling ambient on acceptor passivation in carbon-doped gallium arsenide (GaAs). Use of metalorganic chemical vapor deposition in GaAs growth; Effect of carbon concentration in the GaAs on passivation; Reactivation of carbon acceptors by annealing.
ACCESSION #
4329609

 

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