Metalorganic chemical vapor deposition of InP using phosphine modulation

Lee, M.K.; Hu, C.C.; Lin, M.H.
March 1993
Applied Physics Letters;3/15/1993, Vol. 62 Issue 11, p1245
Academic Journal
Examines the metalorganic chemical vapor deposition of indium phosphide (InP) using phosphine modulation. Improvement of crystal quality upon increase in the surface mobility of In atoms; Correlation between photoluminescence and growth conditions; Role of growth temperature on flow-rate modulation epitaxy.


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