TITLE

Dimerization induced Be segregation in GaAs

AUTHOR(S)
Cunningham, J.E.; Goossen, K.W.; Chiu, T.H.; Williams, M.D.; Jan, W.; Storz, F.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/15/1993, Vol. 62 Issue 11, p1236
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Characterizes the segregation of beryllium (Be) in gallium arsenide. Change in the segregation dependence following codoping of doped Be and doped silicon; Role of doped Be deposition on gallium arsenide surfacing; Impact of energy gained from dimerization on growth segregation.
ACCESSION #
4329605

 

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