Dimerization induced Be segregation in GaAs

Cunningham, J.E.; Goossen, K.W.; Chiu, T.H.; Williams, M.D.; Jan, W.; Storz, F.
March 1993
Applied Physics Letters;3/15/1993, Vol. 62 Issue 11, p1236
Academic Journal
Characterizes the segregation of beryllium (Be) in gallium arsenide. Change in the segregation dependence following codoping of doped Be and doped silicon; Role of doped Be deposition on gallium arsenide surfacing; Impact of energy gained from dimerization on growth segregation.


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