Comparative influence of bias and nucleation layer thickness on the heteroepitaxial growth of

Kistenmacher, Thomas J.; Bryden, Wayne A.
March 1993
Applied Physics Letters;3/15/1993, Vol. 62 Issue 11, p1221
Academic Journal
Investigates the effects of bias and nucleation layer thickness on the heteroepitaxy of indium nitride (InN) films on semiconducting silicon and sapphire. Characterization of the electrical properties of InN overlayers; Impact of the absence of aluminum nitride-nucleation layer on the films.


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