TITLE

Comparative influence of bias and nucleation layer thickness on the heteroepitaxial growth of

AUTHOR(S)
Kistenmacher, Thomas J.; Bryden, Wayne A.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/15/1993, Vol. 62 Issue 11, p1221
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the effects of bias and nucleation layer thickness on the heteroepitaxy of indium nitride (InN) films on semiconducting silicon and sapphire. Characterization of the electrical properties of InN overlayers; Impact of the absence of aluminum nitride-nucleation layer on the films.
ACCESSION #
4329600

 

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