TITLE

Structure of recrystallized silicon films prepared from amorphous silicon deposited using disilane

AUTHOR(S)
Hasegawa, S.; Sakamoto, S.; Inokuma, T.; Kurata, Y.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/15/1993, Vol. 62 Issue 11, p1218
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the structure of polycrystalline silicon (poly-Si) films made by the annealing of amorphous silicon films deposited using disilane. Function of deposition temperature in the preparation of poly-Si thin films; Change in the texture of poly-Si films; Influence of amorphous Si films deposition change on texture and grain size.
ACCESSION #
4329599

 

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