TITLE

Comparison of boron diffusion in Si and strained Si[sub 1-x]Ge[sub x] epitaxial layers

AUTHOR(S)
Kuo, P.; Hoyt, J.L.; Gibbons, J.F.; Turner, J.E.; Jacowitz, R.D.; Kamins, T.I.
PUB. DATE
February 1993
SOURCE
Applied Physics Letters;2/8/1993, Vol. 62 Issue 6, p612
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Compares the boron diffusion in silicon (Si) and strained Si[sub 1-x]Ge[sub x] epitaxial layers. Observation on the diffusion coefficient; Advantages of heterojunction bipolar transistors over homojunction devices; Explanation for the boron diffusion in SiGe.
ACCESSION #
4329569

 

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