TITLE

Symmetric Si/Si[sub 1-x]Ge[sub x] electron resonant tunneling diodes with an anomalous

AUTHOR(S)
Matutinovic-Krstelj, Z.; Liu, C.W.; Xiao, X.; Sturm, J.C.
PUB. DATE
February 1993
SOURCE
Applied Physics Letters;2/8/1993, Vol. 62 Issue 6, p603
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the fabrication of symmetric, n-type resonant tunneling diodes grown by thermal chemical vapor deposition in the Si/Si[sub 1-x]Ge[sub x] material system. Ways to achieve electron resonant tunneling; Temperature dependence of the resonances; Details on the longitudinal optical phonon emission.
ACCESSION #
4329566

 

Related Articles

  • Selective growth of Si/SiGe resonant tunneling diodes by atmospheric pressure chemical vapor.... Zalslavsky, A.; Grutzmacher, D.A. // Applied Physics Letters;12/14/1992, Vol. 61 Issue 24, p2872 

    Examines selective growth of Si/SiGe resonant tunneling diodes using atmospheric pressure chemical vapor deposition. Details on the observed current-voltage characteristics corresponding to resonant tunneling; Influence of well-resolved heavy- and light-hole subbands on tunnelling structure...

  • Si/SiGe n-type resonant tunneling diodes fabricated using in situ hydrogen cleaning. Suet, Z.; Paul, D. J.; Zhang, J.; Turner, S. G. // Applied Physics Letters;5/14/2007, Vol. 90 Issue 20, p203501 

    In situ hydrogen cleaning to reduce the surface segregation of n-type dopants in SiGe epitaxy has been used to fabricate Si/SiGe resonant tunneling diodes in a joint gas source chemical vapor deposition and molecular beam epitaxial system. Diodes fabricated without the in situ clean demonstrate...

  • Towards Tunneling Through a Single Dopant Atom. Caro, J.; Smit, G. D. J.; Sellier, H.; Loo, R.; Caymax, M.; Rogge, S.; Klapwijk, T. M. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1587 

    Aiming for atom-based functionality, we study self-assembled CoSi2/Si Schottky nanodiodes and CVD-grown Si δ-doped p+/p-/p+ tunneling devices. Due to their smallness, the CoSi2/Si diodes comprise only a limited number of dopant atoms in the Schottky barrier. Transport through the smaller...

  • High power, high efficiency antiguide laser arrays. Major Jr., J.S.; Mehuys, D.; Welch, D.F.; Scifres, D.R. // Applied Physics Letters;10/28/1991, Vol. 59 Issue 18, p2210 

    Examines the fabrication of antiguide laser diode arrays. Indications of the far field patterns; Oscillation of two lateral spatial modes at 150 milliwatts; Growth of diode arrays by metalorganic chemical vapor deposition.

  • High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially... Parish, G.; Keller, S. // Applied Physics Letters;7/12/1999, Vol. 75 Issue 2, p247 

    Reports that solar-blind ultraviolet photodiodes were fabricated on laterally epitaxially overgrown GaN grown by metalorganic chemical vapor deposition. Fabrication of diodes using the p-i-n structure deposited on dislocated GaN.

  • Charging effects in silicon nanocrystals within SiO[sub 2] layers, fabricated by chemical vapor deposition, oxidation, and annealing. Kouvatsos, D. N.; Ioannou-Sougleridis, V.; Nassiopoulou, A. G. // Applied Physics Letters;1/20/2003, Vol. 82 Issue 3, p397 

    Metal-insulator-semiconductor structures with a layer of silicon nanocrystals embedded within the SiO[SUB2] layer at a tunneling distance from a p-type silicon substrate and fabricated using chemical vapor deposition, oxidation, and annealing, exhibited charge trapping, determined from the...

  • Observation of the D-center in 6H-SiC p-n diodes grown by chemical vapor deposition. Mazzola, Michael S.; Saddow, Stephen E. // Applied Physics Letters;5/16/1994, Vol. 64 Issue 20, p2730 

    Observes D-center in 6 hexagonal-silicon carbide p-n diodes grown by chemical vapor deposition (CVD). Importance of electrically active deep levels in electronic-grade silicon carbide materials for optoelectronic devices; Preparation of electrical characterization; Concentration of the carbon...

  • High continuous wave power, 0.8 microm-band, Al-free active-region diode lasers. Wade, J.K.; Mawst, L.J. // Applied Physics Letters;1/13/1997, Vol. 70 Issue 2, p149 

    Develops an aluminum free active region diode laser grown by low-pressure metalorganic chemical vapor deposition. Threshold current densities, maximum wave power and wallplug efficiency of uncoated devices with In[sub 0.5(Ga[sub 0.5]Al[sub 0.5])[sub 0.5]P cladding; Temperature and optical...

  • Synthesis of Si nanopyramids at SiOx/Si interface for enhancing electroluminescence of Si-rich SiOx. Lin, Gong-Ru; Lin, Chi-Kuan; Chou, Li-Jen; Chueh, Yu-Lun // Applied Physics Letters;8/28/2006, Vol. 89 Issue 9, p093126 

    Enhanced electroluminescence (EL) of ITO/SiOx/Si-nanopyramid/p-Si/Al diode is investigated. By using low-power plasma enhanced chemical vapor deposition at high substrate temperature, anomalous (100)-oriented Si nanopyramids with a surface density of 1.6×1010 cm-2 are synthesized at SiOx/Si...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics