Ambient scanning tunneling spectroscopy of n- and p-type gallium arsenide

Dagata, J.A.; Tseng, W.
February 1993
Applied Physics Letters;2/8/1993, Vol. 62 Issue 6, p591
Academic Journal
Analyzes the ambient scanning tunneling spectroscopy (STS) of n- and p-doped gallium arsenide (GaAs) surfaces. Difference between the ambient and ultrahigh vacuum spectra for the n-type GaAs; Ways to obtain the STS spectra of GaAs surfaces; Comparison between the STS spectra of the passivated and etched surfaces.


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