Polarization dependent refractive index of an interdiffusion induced AlGaAs/GaAs quantum well

Li, E. Herbert; Weiss, BErnard L.; Chan, K.S.; Micallef, Joseph
February 1993
Applied Physics Letters;2/8/1993, Vol. 62 Issue 6, p550
Academic Journal
Investigates the polarization dependent refractive index in disordered AlGaAs/GaAs single quantum wells. Use of an error function in modeling the confinement profile; Relation between wavelengths and interdiffusion; Wavelength range for a positive refractive index step.


Related Articles

  • Direct measurement of dispersive nonlinearities in GaAs. Lee, Y. H.; Chavez-Pirson, A.; Rhee, B. K.; Gibbs, H. M.; Gossard, A. C.; Wiegmann, W. // Applied Physics Letters;12/1/1986, Vol. 49 Issue 22, p1505 

    Nonlinear refractive index changes in 299 Å multiple quantum well GaAs were obtained directly by measuring Fabry–Perot transmission peak shifts. These changes crosscheck those obtained by Kramers–Kronig transformations of the nonlinear absorption under identical pumping...

  • Intensity-dependent refractive index of a Pöschl-Teller quantum well. Yildirim, Hasan; Tomak, Mehmet // Journal of Applied Physics;5/1/2006, Vol. 99 Issue 9, p093103 

    The linear and nonlinear changes in the refractive index of a Pöschl-Teller quantum well are studied. The Pöschl-Teller potential can easily become asymmetric by a correct choice of its parameter set. We use this feature to investigate the intensity-dependent refractive index of a GaAs...

  • Electric field induced refractive index changes in GaAs-AlxGa1-xAs quantum wells. Hiroshima, Tohya // Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p968 

    The refractive index changes near the excitonic absorption edge in a GaAs-AlxGa1-xAs quantum well structure due to an external electric field have been calculated. Calculated maximum variation in the refractive index is approximately -0.07 for an electric field of 80 kV/cm for both a...

  • Carrier induced refractive index change in AlGaAs quantum well lasers. Dutta, N. K.; Olsson, N. A.; Tsang, W. T. // Applied Physics Letters;1984, Vol. 45 Issue 8, p836 

    Measurements of the carrier induced refractive index change in AlGaAs quantum well lasers are presented which show that the guided mode in single quantum well lasers exhibits a small (Δn/ΔN∼-3×10-22 cm3) carrier induced change in refractive index. This is more than an order of...

  • GaAs/AlGaAs quantum-well photodetector for visible and middle infrared dual-band detection. Liu, H. C.; Liu, H.C.; Song, C. Y.; Song, C.Y.; Shen, A.; Gao, M.; Wasilewski, Z. R.; Wasilewski, Z.R.; Buchanan, M. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    We present experimental results on quantum-well photodetectors for visible and infrared dual-band detection. Large band gap top contacts were used on a standard GaAs/AlGaAs quantum-well infrared photodetector so that visible light could reach the quantum-well region and be absorbed via interband...

  • 3-pJ, 82-MHz optical logic gates in a room-temperature GaAs-AlGaAs multiple-quantum-well étalon. Jewell, J. L.; Lee, Y. H.; Warren, M.; Gibbs, H. M.; Peyghambarian, N.; Gossard, A. C.; Wiegmann, W. // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p918 

    Various pulsed logic functions (nor, xor, etc.) are performed in a high-finesse nonlinear Fabry–Perot étalon containing GaAs-AlGaAs multiple quantum wells at room temperature. Input pulses with energies less than 3 pJ incident on the device produced contrasts greater than 5 : 1 in the...

  • Room-temperature pseudomorphic InxGa1-xAs/GaAs quantum well surface-emitting lasers at 0.94–1.0 μm wavelengths. Huang, K. F.; Tai, K.; Jewell, J. L.; Fischer, R. J.; McCall, S. L.; Cho, A. Y. // Applied Physics Letters;5/29/1989, Vol. 54 Issue 22, p2192 

    We report room-temperature lasing at 0.94–1.002 μm in high-finesse Fabry– Perot resonators with Inx Ga1-x As/GaAs multiple quantum well active layers (x=0.18–0.2). The quantum wells and AlAs/GaAs quarter-wave stack mirrors were epitaxially grown on GaAs substrates....

  • Spectroscopy of GaAs/AlGaAs microstructures with submicron spatial resolution using a near-field scanning optical microscope. Kazantsev, D. V.; Gippius, N. A.; Oshinovo, Dzh.; Forchel�, A. // JETP Letters;4/10/96, Vol. 63 Issue 7, p550 

    A near-field scanning optical microscope (NSOM), which we built, is used to investigate 1-5-�m wide stripes with a 10-nm thick layer�a quantum well � on a GaAs surface. A map of the photoluminescence intensity is obtained synchronously with the topographic profile of the...

  • Origin of the nonlinear index saturation in the band tail absorption region of GaAs/AlGaAs.... Sfez, B.G.; Oudar, J.L. // Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1163 

    Examines the saturation behavior of the nonlinear index in the band tail of gallium arsenide (GaAs)/aluminum GaAs multiple quantum wells. Occurrence of dispersive optical bistability; Dependence of saturation on absorption; Level of the saturation intensity; Origin of the nonlinear index...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics