Measurement of damage profile in semiconductors: A sensitive optical technique

Shwe, C.; Gal, M.
February 1993
Applied Physics Letters;2/1/1993, Vol. 62 Issue 5, p516
Academic Journal
Measures the depth distribution of damage in gallium arsenide semiconductors. Use of differential reflectance spectroscopy in combination with chemical-etch removal of surface layer; Creation of damage by several ion-assisted processes; Estimation of the method depth resolution.


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