TITLE

Focused-ion-beam defined and overgrown collector-up AlGaAs/GaAs heterojunction bipolar transistors

AUTHOR(S)
Ishibashi, T.; Fischer, A.; Wieck, A.D.; Ploog, K.
PUB. DATE
February 1993
SOURCE
Applied Physics Letters;2/1/1993, Vol. 62 Issue 5, p513
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates a collector-up aluminum gallium arsenide/gallium arsenide heterojunction bipolar transistors. Fabrication of the device by gallium focused-ion-beam implantation combined with molecular beam epitaxy overgrowth; Production of a potential barrier used for blocking electron injection; Characteristics of the fabricated device.
ACCESSION #
4329536

 

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