TITLE

Epitaxial Si films on Ge(100) grown via H/Cl exchange

AUTHOR(S)
Gates, S.M.; Koleske, D.D.; Heath, J.R.; Copel, M.
PUB. DATE
February 1993
SOURCE
Applied Physics Letters;2/1/1993, Vol. 62 Issue 5, p510
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the isothermal growth of thin epitaxial silicon films on germanium(100) substrates using hydrogen/chlorine exchange chemistry. Results of alternating exposure of Si[sub 2]H[sub 6] and Si[sub 2]Cl[sub 6]; Effect of growth temperature on film morphology; Analysis of film morphology by cross-sectional transmission electron microscopy.
ACCESSION #
4329535

 

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