Incorporation of high concentrations of erbium in crystal silicon

Polman, A.; Custer, J.S.; Snoeks, E.; van den Hoven, G.N.
February 1993
Applied Physics Letters;2/1/1993, Vol. 62 Issue 5, p507
Academic Journal
Demonstrates the incorporation of high concentrations of erbium (Er) in crystal silicon (Si) by solid phase epitaxy of Er-implanted amorphous Si. Segregation and trapping of Er during thermal recrystallization of the amorphous layer; Importance of maintaining critical level of Er content in epitaxial regrowth; Temperature dependence of Er concentration limit.


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