Electron mobility enhancement from coupled wells in delta-doped GaAs

Zheng, X.; Carns, T.K.; Wang, K.L.; Wu, B.
February 1993
Applied Physics Letters;2/1/1993, Vol. 62 Issue 5, p504
Academic Journal
Describes the electron Hall mobility enhancement due to coupling between two silicon quantum wells in delta-doped gallium arsenide. Growth of the structure by molecular beam epitaxy; Temperature dependence of Hall mobility; Role of Hall carrier density in the observed mobility behavior.


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