TITLE

Scanning force microscopy measurement of edge growth rate enhancement in selective area epitaxy

AUTHOR(S)
Cotta, M.A.; Hamm, R.A.; Staley, T.W.; Yadvish, R.D.; Harriott, L.R.; Temkin, H.
PUB. DATE
February 1993
SOURCE
Applied Physics Letters;2/1/1993, Vol. 62 Issue 5, p496
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the edge growth rate enhancement of indium phosphide and lattice matched indium gallium arsenide layers grown on silica-masked InP substrate. Growth of the sample by metalorganic molecular beam epitaxy; Use of scanning force microscopy; Dependence of the migration length on metalorganic and hydride flows.
ACCESSION #
4329530

 

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