Tin oxide gated metal-insulator-semiconductor switch diode for room-temperature high speed gas

Fang, Y.K.; Chen, F.Y.; Hwang, J.D.; Fang, B.C.; Jiann-Ruey Chen
February 1993
Applied Physics Letters;2/1/1993, Vol. 62 Issue 5, p490
Academic Journal
Develops a tin oxide gated metal-insulator-semiconductor switch diode. Accounts on the device gate turn-off capability and response time under various gas ambients; Sensitivity for high speed gas sensing at room temperature; Factors leading to the high speed and sensitivity features of the sensors.


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