TITLE

Effect of self-implantation on structure and oxidation behavior of single crystal beta-SiC

AUTHOR(S)
Honghua Du; Libera, Matthew; Zunde Yang; Po-Jen Lai; Jacobson, Dale C.; Wang, Yu. C.; Davis, Robert F.
PUB. DATE
January 1993
SOURCE
Applied Physics Letters;1/25/1993, Vol. 62 Issue 4, p423
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effect of self-implantation on structure and oxidation behavior of beta-silicon carbide crystals (SiC). Occurrence of lattice recovery during the implantation process; Acceleration of SiC oxidation rate; Absence of amorphization in the implanted region.
ACCESSION #
4329504

 

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